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Chances are you’ve heard of graphene transistors before, and that’s because the technology’s touted as capable of one day replacing silicon.  IBM Research has just overcome one of the biggest roadblocks in getting to that point, who claims to have opened a “bandgap” for carbon-based graphene field-effect transistors (FETs),

“Graphene doesn’t naturally have a bandgap, which is necessary for most electronic applications,” said IBM Fellow Phaedon Avouris. “But now we can report turnable electrical bandgaps of up to 130meV for our bi-layer graphene FETs. And larger bandgaps are certainly feasible.”

Avrouis says this latest breakthrough swings the door wide open for the future use of graphen in digital electronics and optoelectronics devices.

Get all the geeky details here.